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DiamFab at 2018 MRS Fall Meeting in Boston
DiamFab at 2018 MRS Fall Meeting in Boston
DiamFab will be in 2018 MRS Fall Meeting in Boston  on November 25-30, 2018. Three members of our team will be there: Gauthier Chicot, David Eon...
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DiamFab presentation at NDNC 2018 conference
DiamFab presentation at NDNC 2018 conference
Let’s meet us at the 12th New Diamond an Nano Carbons Conference (NDNC 2018) in Flagstaff, Arizona, USA on May 20-24, 2018. A presentation of...
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Hasselt Diamond Workshop 2018 March 6-9, 2018
Hasselt Diamond Workshop 2018 March 6-9, 2018
Let’s meet us at Hasselt Diamond Workshop 2017 – SBDD XXIII on March 6-9, 2018. DiamFab is an official sponsor of this event and our team will be...
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Meet us in E-MRS Fall meeting in Warsaw
Meet us in E-MRS Fall meeting in Warsaw
DiamFab will be in E-MRS Fall meeting in Warsaw - Poland  on September 18-20, 2017. Let's meet us in booth n°10 to discover our team,  products and...
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ICDCM Gothenburg, September 3-7, 2017
ICDCM Gothenburg, September 3-7, 2017
One member of our team (Gauthier Chicot) will be in ICDCM in Gothenburg on September 3-7, 2017. Feel free to contact us to arrange an...
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Meet us in Hasselt  Diamond Workshop 2017 March 8-10, 2017
Meet us in Hasselt Diamond Workshop 2017 March 8-10, 2017
DiamFab is an official sponsor of Hasselt Diamond Workshop 2017 - SBDD XXII on March 8-10, 2017. Members of our team will participate to this...
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Diamond epitaxial layer for power device application

We have developed the growth of diamond layers on diamond substrate  for more than 15 years. Our know-how enables us to control the doping and the thicknesses of material with a unique precision and quality. Today, we manage to grow diamond at the state of the art with electronic quality. We can provide bare-die device ready material from regular volume for industrial companies to single substrate structures for university and R&D labs.

Applications

Diamond is a next generation semiconductor material for high power electronic application with their unique electrical and thermal properties. Diamond is also ideal for high temperature device applications. DiamFab’s expertise in diamond epitaxy builds on more 15 years of experience. Since the beginning we have developed original concepts to control growth and doping up to metallic conduction.

Advantages and benefits

Currently, diamond involves an important investment and is in competition with other materials (SiC and GaN). However, the expected performances are better allowing to company working in power conversion a net size reduction of the component, and a race to high voltage and high current. With the future society which will request a high efficiency for energy and a worldwide distribution, diamond as new material is a unique candidate.

About Us

Who we are ?

DiamFab is a pre-incubation company from Institut Néel laboratory in Grenoble, France.  Involved in several domains related to wide band gap semiconductors, our group has developed a recognized know-how in the growth of diamond layers on diamond substrate for more than 15 years. Our know-how enables us to control the doping and the thicknesses of material with a unique precision and quality which allow us to grow « electronic grade » diamond.  Therefore DiamFab will enhance this expertise to provide bare-die device ready material from single substrate structures for university and R&D labs to regular volume for industrial companies.

Four members of the wide band gap semiconductor group of Institut Néel laboratory are involved in DiamFab project: Etienne Gheeraert (Scientific Expert), Julien Pernot (Scientific Expert), David Eon (Project Manager) and Gauthier Chicot (Semiconductor Expert).

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If you are interested in our products or for any questions, feel free to contact us.